BD827 Specs and Replacement

Type Designator: BD827

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

 BD827 Substitution

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BD827 datasheet

 ..1. Size:211K  inchange semiconductor

 bd827.pdf pdf_icon

BD827

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD825B, BD826, BD826-10, BD826-16, BD826-25, BD826-6, BD826A, BD826B, BC549, BD827-10, BD827-16, BD827-25, BD827-6, BD827A, BD827B, BD828, BD828-10

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