BD827 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD827
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
BD827 Transistor Equivalent Substitute - Cross-Reference Search
BD827 Datasheet (PDF)
..1. Size:211K inchange semiconductor
bd827.pdf
bd827.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD827DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.
Datasheet: BD825B , BD826 , BD826-10 , BD826-16 , BD826-25 , BD826-6 , BD826A , BD826B , D880 , BD827-10 , BD827-16 , BD827-25 , BD827-6 , BD827A , BD827B , BD828 , BD828-10 .
