All Transistors. BD828-10 Datasheet

 

BD828-10 Datasheet and Replacement


   Type Designator: BD828-10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO202
 

 BD828-10 Substitution

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BD828-10 Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
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BD828-10

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD828DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD827 , BD827-10 , BD827-16 , BD827-25 , BD827-6 , BD827A , BD827B , BD828 , A1266 , BD828-16 , BD828-25 , BD828-6 , BD828A , BD828B , BD829 , BD829-10 , BD829-16 .

Keywords - BD828-10 transistor datasheet

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