BD828-10 Specs and Replacement
Type Designator: BD828-10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO202
BD828-10 Substitution
- BJT ⓘ Cross-Reference Search
BD828-10 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD828 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒
Detailed specifications: BD827, BD827-10, BD827-16, BD827-25, BD827-6, BD827A, BD827B, BD828, TIP142, BD828-16, BD828-25, BD828-6, BD828A, BD828B, BD829, BD829-10, BD829-16
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