All Transistors. BD828B Datasheet

 

BD828B Datasheet and Replacement


   Type Designator: BD828B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO202
 

 BD828B Substitution

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BD828B Datasheet (PDF)

 9.1. Size:211K  inchange semiconductor
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BD828B

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD828DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD827A , BD827B , BD828 , BD828-10 , BD828-16 , BD828-25 , BD828-6 , BD828A , 2SD1555 , BD829 , BD829-10 , BD829-16 , BD829-25 , BD829-6 , BD829A , BD829B , BD830 .

Keywords - BD828B transistor datasheet

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