BD830B Specs and Replacement

Type Designator: BD830B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO202

 BD830B Substitution

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BD830B datasheet

 9.1. Size:50K  philips

 bd830.pdf pdf_icon

BD830B

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD830 PNP power transistor Product specification 1999 Apr 21 Supersedes data of 1998 May 29 Philips Semiconductors Product specification PNP power transistor BD830 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounti... See More ⇒

 9.2. Size:212K  inchange semiconductor

 bd830.pdf pdf_icon

BD830B

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD830 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits.... See More ⇒

Detailed specifications: BD829A, BD829B, BD830, BD830-10, BD830-16, BD830-25, BD830-6, BD830A, TIP41C, BD833, BD834, BD835, BD836, BD837, BD838, BD839, BD840

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