All Transistors. BD830B Datasheet

 

BD830B Datasheet and Replacement


   Type Designator: BD830B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO202
 

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BD830B Datasheet (PDF)

 9.1. Size:50K  philips
 bd830.pdf pdf_icon

BD830B

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D067BD830PNP power transistorProduct specification 1999 Apr 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationPNP power transistor BD830FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mounti

 9.2. Size:212K  inchange semiconductor
 bd830.pdf pdf_icon

BD830B

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD830DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD829A , BD829B , BD830 , BD830-10 , BD830-16 , BD830-25 , BD830-6 , BD830A , C945 , BD833 , BD834 , BD835 , BD836 , BD837 , BD838 , BD839 , BD840 .

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