All Transistors. BD840 Datasheet

 

BD840 Datasheet and Replacement


   Type Designator: BD840
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

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BD840 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
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BD840

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD840DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD839Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver-stages in hi-fi amplifiers andtelevision circuits.

Datasheet: BD830B , BD833 , BD834 , BD835 , BD836 , BD837 , BD838 , BD839 , C5198 , BD841 , BD842 , BD843 , BD844 , BD845 , BD846 , BD847 , BD848 .

History: 2N1171

Keywords - BD840 transistor datasheet

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