BD840 Specs and Replacement

Type Designator: BD840

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

 BD840 Substitution

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BD840 datasheet

 ..1. Size:212K  inchange semiconductor

 bd840.pdf pdf_icon

BD840

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD840 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD839 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD830B, BD833, BD834, BD835, BD836, BD837, BD838, BD839, 2N3055, BD841, BD842, BD843, BD844, BD845, BD846, BD847, BD848

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