BDB01D Datasheet, Equivalent, Cross Reference Search
Type Designator: BDB01D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
BDB01D Transistor Equivalent Substitute - Cross-Reference Search
BDB01D Datasheet (PDF)
9.1. Size:132K motorola
bdb01cre.pdf
bdb01cre.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB01C/DOne Watt Amplifier TransistorsBDB01C,DNPN SiliconCOLLECTOR32BASE1231EMITTERCASE 29 05, STYLE 1MAXIM
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .