All Transistors. BDB01D Datasheet

 

BDB01D Datasheet and Replacement


   Type Designator: BDB01D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 BDB01D Substitution

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BDB01D Datasheet (PDF)

 9.1. Size:132K  motorola
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BDB01D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB01C/DOne Watt Amplifier TransistorsBDB01C,DNPN SiliconCOLLECTOR32BASE1231EMITTERCASE 2905, STYLE 1MAXIMUM RATINGSTO92 (TO226AE)Rating Symbol BDB01C BDB01D UnitCollectorEmitter Voltage VCEO 80 100 VdcCollectorBase Voltage VCES 80 100 VdcEmitterBase Voltage VEBO 5.0 VdcColl

Datasheet: BDAP36 , BDAP54 , BDAP54A , BDAP54B , BDAP54C , BDAP55 , BDB01A , BDB01B , 2SA1943 , BDB02A , BDB02B , BDB02C , BDB02D , BDB03 , BDB04 , BDB05 , BDB06 .

Keywords - BDB01D transistor datasheet

 BDB01D cross reference
 BDB01D equivalent finder
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