All Transistors. BDB02D Datasheet

 

BDB02D Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDB02D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 BDB02D Transistor Equivalent Substitute - Cross-Reference Search

   

BDB02D Datasheet (PDF)

 9.1. Size:137K  motorola
 bdb02cre.pdf

BDB02D BDB02D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BDB02C/DOne Watt Amplifier TransistorsBDB02C,DPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSRating Symbol BDB02C BDB02D UnitCASE 2905, STYLE 1TO92 (TO226AE)CollectorEmitter Voltage VCEO 80 100 VdcCollectorBase Voltage VCES 80 100 VdcEmitterBase Voltage VEBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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