BDB02D PDF and Equivalents Search

BDB02D Specs and Replacement

Type Designator: BDB02D

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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BDB02D datasheet

Detailed specifications: BDAP54C, BDAP55, BDB01A, BDB01B, BDB01D, BDB02A, BDB02B, BDB02C, TIP3055, BDB03, BDB04, BDB05, BDB06, BDBO1C, BDC01A, BDC01B, BDC01C

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