All Transistors. BDV96 Datasheet

 

BDV96 Datasheet and Replacement


   Type Designator: BDV96
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TOP3
 

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BDV96 Datasheet (PDF)

 ..1. Size:221K  inchange semiconductor
 bdv92 bdv94 bdv96.pdf pdf_icon

BDV96

isc Silicon PNP Power Transistor BDV92/94/96DESCRIPTIONCollector Current -I = -10ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDV92; -60V(Min)- BDV94CEO(SUS)-80V(Min)- BDV96Complement to Type BDV91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalamp

Datasheet: BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , D882P , BDW10 , BDW10A , BDW12 , BDW12A , BDW14 , BDW14A , BDW16 , BDW16A .

History: 2SB141 | PZ3904

Keywords - BDV96 transistor datasheet

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