BDV96 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDV96
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP3
BDV96 Transistor Equivalent Substitute - Cross-Reference Search
BDV96 Datasheet (PDF)
bdv92 bdv94 bdv96.pdf
isc Silicon PNP Power Transistor BDV92/94/96DESCRIPTIONCollector Current -I = -10ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDV92; -60V(Min)- BDV94CEO(SUS)-80V(Min)- BDV96Complement to Type BDV91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages and generalamp
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .