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BDV96 Specs and Replacement

Type Designator: BDV96

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TOP3

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BDV96 datasheet

 ..1. Size:221K  inchange semiconductor

 bdv92 bdv94 bdv96.pdf pdf_icon

BDV96

isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION Collector Current -I = -10A C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDV92; -60V(Min)- BDV94 CEO(SUS) -80V(Min)- BDV96 Complement to Type BDV91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages and general amp... See More ⇒

Detailed specifications: BDV67B, BDV67C, BDV67D, BDV91, BDV92, BDV93, BDV94, BDV95, 2SC2240, BDW10, BDW10A, BDW12, BDW12A, BDW14, BDW14A, BDW16, BDW16A

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