BDW12A Specs and Replacement
Type Designator: BDW12A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 180 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BDW12A Substitution
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BDW12A datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BDW12 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: BDV92, BDV93, BDV94, BDV95, BDV96, BDW10, BDW10A, BDW12, 2SD669, BDW14, BDW14A, BDW16, BDW16A, BDW21, BDW21A, BDW21B, BDW21C
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