All Transistors. BDW12A Datasheet

 

BDW12A Datasheet and Replacement


   Type Designator: BDW12A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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BDW12A Datasheet (PDF)

 9.1. Size:179K  inchange semiconductor
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BDW12A

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW12DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , BDW10 , BDW10A , BDW12 , BC549 , BDW14 , BDW14A , BDW16 , BDW16A , BDW21 , BDW21A , BDW21B , BDW21C .

History: ZX5T851A | 2SB1169A | 2SA1199S | BC257VI | 3DA30G | BUS14-5 | 2N2697

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