BDW12A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW12A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 180 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BDW12A Transistor Equivalent Substitute - Cross-Reference Search
BDW12A Datasheet (PDF)
9.1. Size:179K inchange semiconductor
bdw12.pdf
bdw12.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW12DESCRIPTIONWith TO-3 PackageHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
