BDW21B Datasheet. Specs and Replacement

Type Designator: BDW21B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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BDW21B datasheet

 9.1. Size:178K  inchange semiconductor

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BDW21B

INCHANGE Semiconductor isc Silicon NPN Power Transistor BDW21 DESCRIPTION With TO-3 Package High Current Capability Wide area of safe operation Complement to Type BDW22 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE M... See More ⇒

Detailed specifications: BDW12, BDW12A, BDW14, BDW14A, BDW16, BDW16A, BDW21, BDW21A, 431, BDW21C, BDW22, BDW22A, BDW22B, BDW22C, BDW23, BDW23A, BDW23B

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