All Transistors. BDW30 Datasheet

 

BDW30 Datasheet and Replacement


   Type Designator: BDW30
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BDW30 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
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BDW30

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW30DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 10ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 25AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplication

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: GT321G | FMMT723 | 2SC3462 | 2N3322

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