All Transistors. BDW32 Datasheet

 

BDW32 Datasheet and Replacement


   Type Designator: BDW32
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDW32 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
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BDW32

INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW32DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 10ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 25AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplication

Datasheet: BDW24 , BDW24A , BDW24C , BDW25 , BDW25-10 , BDW25-4 , BDW25-6 , BDW30 , C1815 , BDW34 , BDW36 , BDW39 , BDW40 , BDW41 , BDW42 , BDW43 , BDW44 .

History: BDX53D | 2SC4156 | MMBT9015LT1 | 2SC4289 | PN2905A | PN5141 | T1623

Keywords - BDW32 transistor datasheet

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