BDW32 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW32
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDW32 Transistor Equivalent Substitute - Cross-Reference Search
BDW32 Datasheet (PDF)
..1. Size:180K inchange semiconductor
bdw32.pdf
bdw32.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BDW32DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 10ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 20(Min.) @I = 25AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplication
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
