BDW36 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW36
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDW36 Transistor Equivalent Substitute - Cross-Reference Search
BDW36 Datasheet (PDF)
..1. Size:208K inchange semiconductor
bdw36.pdf
bdw36.pdf
isc Silicon NPN Power Transistors BDW36DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 180V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in industrial-military power amplifier andswitching cir
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
