BDW36 Datasheet. Specs and Replacement
Type Designator: BDW36
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDW36 Substitution
- BJT ⓘ Cross-Reference Search
BDW36 datasheet
isc Silicon NPN Power Transistors BDW36 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 180V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage- V )= 1.0V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in industrial-military power amplifier and switching cir... See More ⇒
Detailed specifications: BDW24C, BDW25, BDW25-10, BDW25-4, BDW25-6, BDW30, BDW32, BDW34, C945, BDW39, BDW40, BDW41, BDW42, BDW43, BDW44, BDW45, BDW46
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