All Transistors. BDW36 Datasheet

 

BDW36 Datasheet and Replacement


   Type Designator: BDW36
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BDW36 Datasheet (PDF)

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BDW36

isc Silicon NPN Power Transistors BDW36DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 180V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in industrial-military power amplifier andswitching cir

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FMMT2369 | NKT3703 | DTC124T | MPSW51ARLRAG | BCV72R | KT920B | 2SD1840

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