All Transistors. BDW36 Datasheet

 

BDW36 Datasheet and Replacement


   Type Designator: BDW36
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BDW36 Datasheet (PDF)

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BDW36

isc Silicon NPN Power Transistors BDW36DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 180V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in industrial-military power amplifier andswitching cir

Datasheet: BDW24C , BDW25 , BDW25-10 , BDW25-4 , BDW25-6 , BDW30 , BDW32 , BDW34 , 2N5401 , BDW39 , BDW40 , BDW41 , BDW42 , BDW43 , BDW44 , BDW45 , BDW46 .

History: TP5001P3 | TIP100 | 2SC4119 | MMBTRC102SS | 2SC5824 | 2SC4159 | 3DD880X

Keywords - BDW36 transistor datasheet

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