BDW45 Datasheet and Replacement
Type Designator: BDW45
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO220
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BDW45 Datasheet (PDF)
bdw45.pdf

isc Silicon PNP Darlington Power Transistor BDW45DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = -5AFE CLow Collector Saturation Voltage: V = -2.0V(Max.)@ I = -5.0ACE(sat) C= -3.0V(Max.)@ I = -10ACComplement to Type BDW40Minimum Lot-to-Lot variations for robust deviceperformance and reliable
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BCX53-10 | AF144 | 2SD568Y | BC850BW | 2SC1766A | GT335A | BUF420I
Keywords - BDW45 transistor datasheet
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History: BCX53-10 | AF144 | 2SD568Y | BC850BW | 2SC1766A | GT335A | BUF420I



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