All Transistors. BDW53D Datasheet

 

BDW53D Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDW53D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BDW53D Transistor Equivalent Substitute - Cross-Reference Search

   

BDW53D Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
 bdw53.pdf

BDW53D BDW53D

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW53DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = 1.5A, V = 3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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