BDW53D Datasheet. Specs and Replacement

Type Designator: BDW53D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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BDW53D datasheet

 9.1. Size:202K  inchange semiconductor

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BDW53D

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW53 DESCRIPTION High DC Current Gain h = 750(Min.)@ I = 1.5A, V = 3V FE C CE High Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Low Collector Saturation Voltage Complement to Type BDW54 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi... See More ⇒

Detailed specifications: BDW51C, BDW52, BDW52A, BDW52C, BDW53, BDW53A, BDW53B, BDW53C, TIP31C, BDW54, BDW54A, BDW54B, BDW54C, BDW55, BDW56, BDW57, BDW58

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