All Transistors. BDW53D Datasheet

 

BDW53D Datasheet and Replacement


   Type Designator: BDW53D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220
 

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BDW53D Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
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BDW53D

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW53DESCRIPTIONHigh DC Current Gain: h = 750(Min.)@ I = 1.5A, V = 3VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOLow Collector Saturation VoltageComplement to Type BDW54Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

Datasheet: BDW51C , BDW52 , BDW52A , BDW52C , BDW53 , BDW53A , BDW53B , BDW53C , 100DA025D , BDW54 , BDW54A , BDW54B , BDW54C , BDW55 , BDW56 , BDW57 , BDW58 .

History: 2SD1133 | BC239 | 2SB1215Q | BC251 | 2N2369CSM | 2SC4050 | 2SB1268S

Keywords - BDW53D transistor datasheet

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