BDW55 Datasheet. Specs and Replacement

Type Designator: BDW55

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

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BDW55 datasheet

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 bdw55 bdw57 bdw59.pdf pdf_icon

BDW55

isc Silicon NPN Power Transistors BDW55/57/59 DESCRIPTION Collector Emitter Sustaining Voltage- V = 45V- BDW55 CEO(SUS) = 60V- BDW57 = 80V- BDW59 Complement to Type BDW56/58/60 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: BDW53A, BDW53B, BDW53C, BDW53D, BDW54, BDW54A, BDW54B, BDW54C, 2SC2073, BDW56, BDW57, BDW58, BDW59, BDW60, BDW63, BDW63A, BDW63B

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