BDW60 Datasheet and Replacement
Type Designator: BDW60
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
BDW60 Substitution
BDW60 Datasheet (PDF)
bdw56 bdw58 bdw60.pdf

isc Silicon PNP Power Transistors BDW56/58/60DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = -45V- BDW56CEO(SUS)= -60V- BDW58= -80V- BDW60Complement to Type BDW55/57/59Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in professional equipment such astelecommunication and etc.ABSOLUTE MAXIMUM R
Datasheet: BDW54A , BDW54B , BDW54C , BDW55 , BDW56 , BDW57 , BDW58 , BDW59 , MJE340 , BDW63 , BDW63A , BDW63B , BDW63C , BDW63D , BDW64 , BDW64A , BDW64B .
History: 3N94 | 2SD96 | SRA2212S | GC522 | RN2421 | 2SD2643 | HEPS9149
Keywords - BDW60 transistor datasheet
BDW60 cross reference
BDW60 equivalent finder
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BDW60 replacement
History: 3N94 | 2SD96 | SRA2212S | GC522 | RN2421 | 2SD2643 | HEPS9149



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