BDW60 Specs and Replacement
Type Designator: BDW60
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BDW60 Substitution
- BJT ⓘ Cross-Reference Search
BDW60 datasheet
isc Silicon PNP Power Transistors BDW56/58/60 DESCRIPTION Collector Emitter Sustaining Voltage- V = -45V- BDW56 CEO(SUS) = -60V- BDW58 = -80V- BDW60 Complement to Type BDW55/57/59 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: BDW54A, BDW54B, BDW54C, BDW55, BDW56, BDW57, BDW58, BDW59, 2SC4793, BDW63, BDW63A, BDW63B, BDW63C, BDW63D, BDW64, BDW64A, BDW64B
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