BDX60-4 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDX60-4 Specs and Replacement

Type Designator: BDX60-4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

BDX60-4 Substitution

- BJT ⓘ Cross-Reference Search

BDX60-4 datasheet

9.1. Size:201K inchange semiconductor

bdx60.pdf pdf_icon

isc Silicon NPN Power Transistor BDX60 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V (Min) (BR)CEO High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: BDX54E, BDX54F, BDX54H, BDX54S, BDX55, BDX56, BDX57, BDX60, 2N5401, BDX60-5, BDX60-6, BDX60-7, BDX61, BDX61-4, BDX61-5, BDX61-6, BDX61-7