All Transistors. BDX60-4 Datasheet

 

BDX60-4 Datasheet and Replacement


   Type Designator: BDX60-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

 BDX60-4 Substitution

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BDX60-4 Datasheet (PDF)

 9.1. Size:201K  inchange semiconductor
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BDX60-4

isc Silicon NPN Power Transistor BDX60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM

Datasheet: BDX54E , BDX54F , BDX54H , BDX54S , BDX55 , BDX56 , BDX57 , BDX60 , TIP41 , BDX60-5 , BDX60-6 , BDX60-7 , BDX61 , BDX61-4 , BDX61-5 , BDX61-6 , BDX61-7 .

History: CSC815 | MJ10009 | 2N3803DCSM | BC178 | 2SD590 | MIMD10A | 3DD207

Keywords - BDX60-4 transistor datasheet

 BDX60-4 cross reference
 BDX60-4 equivalent finder
 BDX60-4 lookup
 BDX60-4 substitution
 BDX60-4 replacement

 

 
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