All Transistors. BDX64 Datasheet

 

BDX64 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX64
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3

 BDX64 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX64 Datasheet (PDF)

 ..1. Size:146K  comset
bdx64.pdf

BDX64
BDX64

PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64A

 ..2. Size:139K  inchange semiconductor
bdx64 a b c.pdf

BDX64
BDX64

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDX65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

 ..3. Size:213K  inchange semiconductor
bdx64 bdx64a bdx64b bdx64c.pdf

BDX64
BDX64

isc Silicon PNP Darlington Power Transistor BDX64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDX65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RA

 0.1. Size:169K  comset
bdx64-a-b-c.pdf

BDX64
BDX64

BDX 64, A, B, CPNP SILICON DARLINGTONSPNP SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX64 -60BDX64A -80VCEO Collector-Emitter Voltage VBDX64B-100BDX64C-120BDX64 -60BDX64A -80VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX64B -100BDX64C -120BDX64BDX64

 0.2. Size:117K  inchange semiconductor
bdx64c.pdf

BDX64
BDX64

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX64C DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX65C APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N211

 

 
Back to Top