BDX64 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDX64 Datasheet (PDF)

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PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64A

..2. Size:139K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDX65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

..3. Size:213K inchange semiconductor
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isc Silicon PNP Darlington Power Transistor BDX64/A/B/C DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDX65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RA

0.1. Size:169K comset
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BDX 64, A, B, C PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX64 -60 BDX64A -80 VCEO Collector-Emitter Voltage V BDX64B -100 BDX64C -120 BDX64 -60 BDX64A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX64B -100 BDX64C -120 BDX64 BDX64