BDX86B Specs and Replacement
Type Designator: BDX86B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
BDX86B Substitution
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BDX86B datasheet
bdx86 bdx86a bdx86b bdx86c.pdf 
isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION High DC Current Gain- h = 750(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDX86; -60V(Min)- BDX86A CEO(SUS) -80V(Min)- BDX86B; -100V(Min)- BDX86C Complement to Type BDX85/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION High DC Current Gain- hFE= 750(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C Complement to Type BDX85/A/B/C APPLICATIONS Designed for use in power linear ... See More ⇒
Detailed specifications: BDX84B , BDX84C , BDX85 , BDX85A , BDX85B , BDX85C , BDX86 , BDX86A , 2SD669 , BDX86C , BDX87 , BDX87A , BDX87B , BDX87C , BDX88 , BDX88A , BDX88B .
History: BDX68C
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