BDX88C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX88C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
BDX88C Transistor Equivalent Substitute - Cross-Reference Search
BDX88C Datasheet (PDF)
bdx88c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX88C DESCRIPTION With TO-3 package Complement to type BDX87C DARLINGTON APPLICATIONS Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25
bdx88 bdx88a bdx88b bdx88c.pdf
isc Silicon PNP Darlington Power Transistor BDX88/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -6AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDX88; -60V(Min)- BDX88ACEO(SUS)-80V(Min)- BDX88B; -100V(Min)- BDX88CComplement to Type BDX87/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
bdx88 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= -6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C APPLICATIONS Designed for use in power linear
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
