BDX88C Datasheet. Specs and Replacement

Type Designator: BDX88C  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

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BDX88C datasheet

 ..1. Size:117K  inchange semiconductor

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BDX88C

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 ..2. Size:213K  inchange semiconductor

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BDX88C

isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- h = 750(Min)@ I = -6A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDX88; -60V(Min)- BDX88A CEO(SUS) -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒

 9.1. Size:214K  inchange semiconductor

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BDX88C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION High DC Current Gain- hFE= 750(Min)@ IC= -6A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C Complement to Type BDX87/A/B/C APPLICATIONS Designed for use in power linear ... See More ⇒

Detailed specifications: BDX86C, BDX87, BDX87A, BDX87B, BDX87C, BDX88, BDX88A, BDX88B, TIP32C, BDX91, BDX92, BDX93, BDX94, BDX95, BDX96, BDY10, BDY11

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