All Transistors. BDY29 Datasheet

 

BDY29 Datasheet and Replacement


   Type Designator: BDY29
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 220 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BDY29 Datasheet (PDF)

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BDY29

isc Silicon NPN Power Transistor BDY29DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 75V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING

Datasheet: BDY27 , BDY27A , BDY27B , BDY27C , BDY28 , BDY28A , BDY28B , BDY28C , 2SC2625 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , BDY39-4 , BDY39-6 , BDY42 .

History: 2SC281H | RT1P440M | BFR180W | MQ3638 | FE4018 | DTA124XET1G

Keywords - BDY29 transistor datasheet

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