All Transistors. BDY29 Datasheet

 

BDY29 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY29
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 220 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 BDY29 Transistor Equivalent Substitute - Cross-Reference Search

   

BDY29 Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
 bdy29.pdf

BDY29 BDY29

isc Silicon NPN Power Transistor BDY29DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 75V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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