All Transistors. BDY29 Datasheet

 

BDY29 Datasheet and Replacement


   Type Designator: BDY29
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 220 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BDY29 Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
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BDY29

isc Silicon NPN Power Transistor BDY29DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 75V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NPS4964 | 2SC2458O | BFT53 | 3DG2734 | STD1862L | 2N2852-1 | 2SB622

Keywords - BDY29 transistor datasheet

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