BDY39-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY39-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BDY39-4 Transistor Equivalent Substitute - Cross-Reference Search
BDY39-4 Datasheet (PDF)
9.1. Size:207K inchange semiconductor
bdy39.pdf
bdy39.pdf
isc Silicon NPN Power Transistor BDY39DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =25-100@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.7V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power AF output stages and instabilized power supplies.A
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
