BDY39-4 Specs and Replacement
Type Designator: BDY39-4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BDY39-4 Substitution
- BJT ⓘ Cross-Reference Search
BDY39-4 datasheet
isc Silicon NPN Power Transistor BDY39 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =25-100@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.7V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power AF output stages and in stabilized power supplies. A... See More ⇒
Detailed specifications: BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , 2SC945 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BDY47 , BDY48 .
History: BDY37
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