All Transistors. BDY39-4 Datasheet

 

BDY39-4 Datasheet and Replacement


   Type Designator: BDY39-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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BDY39-4 Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
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BDY39-4

isc Silicon NPN Power Transistor BDY39DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =25-100@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.7V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power AF output stages and instabilized power supplies.A

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | BC817-16W | DTA123EET1G | ESM2060 | MP602 | BUH50 | MMSTA64

Keywords - BDY39-4 transistor datasheet

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