All Transistors. BDY39-4 Datasheet

 

BDY39-4 Datasheet and Replacement


   Type Designator: BDY39-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

 BDY39-4 Substitution

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BDY39-4 Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
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BDY39-4

isc Silicon NPN Power Transistor BDY39DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =25-100@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.7V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power AF output stages and instabilized power supplies.A

Datasheet: BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , BDY37A , BDY38 , BDY39 , 2SC2655 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 , BDY47 , BDY48 .

History: 2SB444H | SFT244 | BSV43 | NSBA124XF3 | BLW65 | D6C | 2SC2693

Keywords - BDY39-4 transistor datasheet

 BDY39-4 cross reference
 BDY39-4 equivalent finder
 BDY39-4 lookup
 BDY39-4 substitution
 BDY39-4 replacement

 

 
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