BDY56 Datasheet and Replacement
Type Designator: BDY56
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY56 Substitution
BDY56 Datasheet (PDF)
bdy55 bdy56.pdf

BDY55 BDY56NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY5560VCEO Collector-Emitter Voltage VBDY56120BDY55 100VCBO Collector-Base Voltage VBDY56 150BDY55VEBO Emitter-Base Voltage 7VBDY56BDY55IC Collector Current
bdy56.pdf

isc Silicon NPN Power Transistor BDY56DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM
bdy55-bdy56.pdf

NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7 VBDY56 BDY55 I
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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