BDY56 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY56
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDY56
BDY56 Datasheet (PDF)
bdy55 bdy56.pdf
BDY55 BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7V BDY56 BDY55 IC Collector Current
bdy56.pdf
isc Silicon NPN Power Transistor BDY56 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM
bdy55-bdy56.pdf
NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7 V BDY56 BDY55 I
Otros transistores... BDY48 , BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 , 2SC2240 , BDY57 , BDY57A , BDY58 , BDY58R , BDY60 , BDY60A , BDY60B , BDY61 .
History: INC5006AC1
History: INC5006AC1
Liste
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