BDY56 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDY56  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BDY56 datasheet

 ..1. Size:158K  comset
 bdy55 bdy56.pdf pdf_icon

BDY56

BDY55 BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7V BDY56 BDY55 IC Collector Current

 ..2. Size:207K  inchange semiconductor
 bdy56.pdf pdf_icon

BDY56

isc Silicon NPN Power Transistor BDY56 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM

 0.1. Size:128K  comset
 bdy55-bdy56.pdf pdf_icon

BDY56

NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7 V BDY56 BDY55 I

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