All Transistors. BDY62 Datasheet

 

BDY62 Datasheet and Replacement


   Type Designator: BDY62
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO3
 

 BDY62 Substitution

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BDY62 Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
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BDY62

isc Silicon NPN Power Transistor BDY62DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 30V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: BDY57 , BDY57A , BDY58 , BDY58R , BDY60 , BDY60A , BDY60B , BDY61 , 13001-A , BDY63 , BDY64 , BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 .

History: MJE13003M8 | 2SA485R | 2SC4371 | 2SC3937 | 2SA2067 | 2SB772-R | ES3124

Keywords - BDY62 transistor datasheet

 BDY62 cross reference
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