BDY62 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY62 Specs and Replacement

Type Designator: BDY62

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO3

BDY62 Substitution

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BDY62 datasheet

..1. Size:200K inchange semiconductor

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isc Silicon NPN Power Transistor BDY62 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 30V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

Detailed specifications: BDY57, BDY57A, BDY58, BDY58R, BDY60, BDY60A, BDY60B, BDY61, MPSA42, BDY63, BDY64, BDY65, BDY66, BDY67, BDY68, BDY69, BDY70