All Transistors. BDY81B Datasheet

 

BDY81B Datasheet and Replacement


   Type Designator: BDY81B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
 

 BDY81B Substitution

   - BJT ⓘ Cross-Reference Search

   

BDY81B Datasheet (PDF)

 9.1. Size:217K  inchange semiconductor
 bdy81.pdf pdf_icon

BDY81B

isc Silicon NPN Power Transistor BDY81DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY83Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , TIP41 , BDY81C , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 , BDY83A , BDY83B .

History: 2SA775A | PN3564 | LMBT2907LT3G | 2N1704 | 2SD1766-P | MPSA56RLRAG | BC262C

Keywords - BDY81B transistor datasheet

 BDY81B cross reference
 BDY81B equivalent finder
 BDY81B lookup
 BDY81B substitution
 BDY81B replacement

 

 
Back to Top

 


 
.