All Transistors. BDY82B Datasheet

 

BDY82B Datasheet and Replacement


   Type Designator: BDY82B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
 
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BDY82B Datasheet (PDF)

 9.1. Size:220K  inchange semiconductor
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BDY82B

isc Silicon PNP Power Transistor BDY82DESCRIPTIONContinuous Collector Current-I = -4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY80Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , 13007 , BDY82C , BDY83 , BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 .

History: BSS79C

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