BDY82B Datasheet and Replacement
Type Designator: BDY82B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
BDY82B Substitution
BDY82B Datasheet (PDF)
bdy82.pdf

isc Silicon PNP Power Transistor BDY82DESCRIPTIONContinuous Collector Current-I = -4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY80Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , 13007 , BDY82C , BDY83 , BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 .
History: SZD882 | BC179B | ZT83 | 2SA1255 | BUW89 | KSP44 | 2N1383V
Keywords - BDY82B transistor datasheet
BDY82B cross reference
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History: SZD882 | BC179B | ZT83 | 2SA1255 | BUW89 | KSP44 | 2N1383V



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