BF175 Specs and Replacement
Type Designator: BF175
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
BF175 Substitution
- BJT ⓘ Cross-Reference Search
BF175 datasheet
pmbfj174 pmbf175 pmbf176 pmbf177.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi... See More ⇒
Detailed specifications: BF166, BF167, BF168, BF169, BF169R, BF170, BF173, BF174, 2SA1943, BF176, BF177, BF178, BF179, BF179A, BF179B, BF179C, BF180
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