BF493S Datasheet, Equivalent, Cross Reference Search
Type Designator: BF493S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
BF493S Transistor Equivalent Substitute - Cross-Reference Search
BF493S Datasheet (PDF)
bf493srev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current
bf493sre.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current
bf493s-d.pdf
BF493SHigh Voltage TransistorPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO -350 Vdc2BASECollector-Base Voltage VCBO -350 VdcEmitter-Base Voltage VEBO -6.0 Vdc1Collector Current - Continuous IC -500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDera
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
