BF493S Datasheet. Specs and Replacement
Type Designator: BF493S 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
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BF493S datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF493S/D High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 350 Vdc Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF493S/D High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 2 BASE 1 1 2 EMITTER 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 350 Vdc Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current ... See More ⇒
BF493S High Voltage Transistor PNP Silicon Features This is a Pb-Free Device* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO -350 Vdc 2 BASE Collector-Base Voltage VCBO -350 Vdc Emitter-Base Voltage VEBO -6.0 Vdc 1 Collector Current - Continuous IC -500 mAdc EMITTER Total Device Dissipation @ TA = 25 C PD 625 mW Dera... See More ⇒
Detailed specifications: BF493, BF493K, BF493L, BF493M, BF493P1, BF493P2, BF493P5, BF493Q, D882P, BF493SP, BF494, BF494A, BF494B, BF494C, BF494D, BF495, BF495B
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