BF494D Datasheet, Equivalent, Cross Reference Search
Type Designator: BF494D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 260 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
BF494D Transistor Equivalent Substitute - Cross-Reference Search
BF494D Datasheet (PDF)
bf494 bf495.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF494; BF495NPN medium frequency transistors1997 Jul 08Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium frequency transistors BF494; BF495FEATURES PINNING Low current (max. 30 mA)PIN DESCRIPTION Low voltage
bf494.pdf
July 2006BF494tmNPN RF TransistorTO-921. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 30 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 30 mATJ Junction Temperature 150 CTSTG Storage Temperature Range - 55 ~ 150 C
bf494 bf495.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494BF495TO-92Plastic PackageHigh Voltage Video TransistorsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL Value UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Vol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
