BF640 Datasheet. Specs and Replacement

Type Designator: BF640  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 0.5 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO72

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BF640 datasheet

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BF640

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15 19A 10V CEBF640 200V 0.15 19A 10V CEFF640 200V 0.15 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. ... See More ⇒

Detailed specifications: BF618EA, BF618G, BF620, BF621, BF622, BF623, BF630, BF639, 2SD669A, BF642, BF642P, BF642P2, BF642W, BF642W3, BF643, BF643P, BF643P2

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