BF767 Datasheet PDF and Equivalents Search

Type Designator: BF767  📄📄 

SMD Transistor Code: G9_LG

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.11 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 550 MHz

Collector Capacitance (Cc): O.3 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SOT23