BF857 Datasheet. Specs and Replacement

Type Designator: BF857  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.8 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 4.2 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO202

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BF857 datasheet

 ..1. Size:63K  philips

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BF857

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DESCRIPTION NPN transistors in a TO-202 plastic package. handbook, halfpage An A-version... See More ⇒

Detailed specifications: BF824, BF840, BF841, BF844, BF845, BF847, BF848, BF850, TIP120, BF857A, BF857BA, BF857EA, BF858, BF858A, BF858EA, BF859, BF859A

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