All Transistors. BF857EA Datasheet

 

BF857EA Datasheet and Replacement


   Type Designator: BF857EA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251
 

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BF857EA Datasheet (PDF)

 9.1. Size:63K  philips
 bf857 bf858 bf859.pdf pdf_icon

BF857EA

DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF857; BF858; BF859NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF857; BF858; BF859DESCRIPTIONNPN transistors in a TO-202 plastic package.handbook, halfpageAn A-version

Datasheet: BF844 , BF845 , BF847 , BF848 , BF850 , BF857 , BF857A , BF857BA , S9018 , BF858 , BF858A , BF858EA , BF859 , BF859A , BF859BA , BF859EA , BF860 .

History: BU126S | TP1613A

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