All Transistors. BF857EA Datasheet

 

BF857EA Datasheet and Replacement


   Type Designator: BF857EA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251

 BF857EA Transistor Equivalent Substitute - Cross-Reference Search

   

BF857EA Datasheet (PDF)

 9.1. Size:63K  philips
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BF857EA

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DESCRIPTION NPN transistors in a TO-202 plastic package. handbook, halfpage An A-version... See More ⇒

Datasheet: BF844 , BF845 , BF847 , BF848 , BF850 , BF857 , BF857A , BF857BA , D667 , BF858 , BF858A , BF858EA , BF859 , BF859A , BF859BA , BF859EA , BF860 .

History: MRF653S | MUN2230LT1 | T1892 | UN9215R | D42C3 | L2SA1576ART1G | L2SC5635LT1G

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