BF859EA Specs and Replacement
Type Designator: BF859EA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO252
BF859EA Substitution
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BF859EA datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DESCRIPTION NPN transistors in a TO-202 plastic package. handbook, halfpage An A-version... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor 1999 Apr 14 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package. handbook, halfpage An A-version with e-b-c pinning instead of e-c-b is available on re... See More ⇒
Detailed specifications: BF857BA, BF857EA, BF858, BF858A, BF858EA, BF859, BF859A, BF859BA, BD139, BF860, BF869, BF869A, BF869BA, BF869EA, BF869S, BF869SA, BF870
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