All Transistors. BF859EA Datasheet

 

BF859EA Datasheet and Replacement


   Type Designator: BF859EA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.8 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO252
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BF859EA Datasheet (PDF)

 9.1. Size:63K  philips
 bf857 bf858 bf859.pdf pdf_icon

BF859EA

DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF857; BF858; BF859NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF857; BF858; BF859DESCRIPTIONNPN transistors in a TO-202 plastic package.handbook, halfpageAn A-version

 9.2. Size:47K  philips
 bf859.pdf pdf_icon

BF859EA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D067BF859NPN high-voltage transistor1999 Apr 14Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistor BF859DESCRIPTIONNPN transistor in a TO-202 plastic package.handbook, halfpageAn A-version with e-b-c pinning instead of e-c-b isavailable on re

Datasheet: BF857BA , BF857EA , BF858 , BF858A , BF858EA , BF859 , BF859A , BF859BA , 2N5551 , BF860 , BF869 , BF869A , BF869BA , BF869EA , BF869S , BF869SA , BF870 .

History: 2SC999A | KT909G | 2SC2141 | 2N1056 | UN9217R | KT8107D2 | ECG2306

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