BFG23 Specs and Replacement
Type Designator: BFG23
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO131
BFG23 Substitution
- BJT ⓘ Cross-Reference Search
BFG23 datasheet
BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Order... See More ⇒
Detailed specifications: BFG193, BFG194, BFG195, BFG196, BFG197, BFG197X, BFG198, BFG19S, BC547B, BFG235, BFG25AX, BFG32, BFG33, BFG33X, BFG34, BFG35, BFG51
Keywords - BFG23 pdf specs
BFG23 cross reference
BFG23 equivalent finder
BFG23 pdf lookup
BFG23 substitution
BFG23 replacement
