All Transistors. BFG23 Datasheet

 

BFG23 Datasheet and Replacement


   Type Designator: BFG23
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO131
 

 BFG23 Substitution

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BFG23 Datasheet (PDF)

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BFG23

BFG 235NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Order

Datasheet: BFG193 , BFG194 , BFG195 , BFG196 , BFG197 , BFG197X , BFG198 , BFG19S , D667 , BFG235 , BFG25AX , BFG32 , BFG33 , BFG33X , BFG34 , BFG35 , BFG51 .

History: MJ2865 | C12-28

Keywords - BFG23 transistor datasheet

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