BFG23 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG23
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO131
BFG23 Transistor Equivalent Substitute - Cross-Reference Search
BFG23 Datasheet (PDF)
0.1. Size:48K siemens
bfg235.pdf
bfg235.pdf
BFG 235NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Order
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
