All Transistors. BFG32 Datasheet

 

BFG32 Datasheet and Replacement


   Type Designator: BFG32
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.075 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO131
 

 BFG32 Substitution

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BFG32 Datasheet (PDF)

 0.1. Size:79K  philips
 bfg325 xr.pdf pdf_icon

BFG32

BFG325/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

 0.2. Size:86K  philips
 bfg325w xr.pdf pdf_icon

BFG32

BFG325W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

Datasheet: BFG196 , BFG197 , BFG197X , BFG198 , BFG19S , BFG23 , BFG235 , BFG25AX , 13001-A , BFG33 , BFG33X , BFG34 , BFG35 , BFG51 , BFG54 , BFG65 , BFG65T .

History: KT947A | MPQ4965 | BF822S | 40311L

Keywords - BFG32 transistor datasheet

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