BFG32 Specs and Replacement

Type Designator: BFG32

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.075 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO131

 BFG32 Substitution

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BFG32 datasheet

 0.1. Size:79K  philips

 bfg325 xr.pdf pdf_icon

BFG32

BFG325/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fre... See More ⇒

 0.2. Size:86K  philips

 bfg325w xr.pdf pdf_icon

BFG32

BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fr... See More ⇒

Detailed specifications: BFG196, BFG197, BFG197X, BFG198, BFG19S, BFG23, BFG235, BFG25AX, MPSA42, BFG33, BFG33X, BFG34, BFG35, BFG51, BFG54, BFG65, BFG65T

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