BFG35 Specs and Replacement

Type Designator: BFG35

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4000 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO251

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BFG35 datasheet

 ..1. Size:97K  philips

 bfg35 3.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification 1999 Aug 24 Supersedes data of 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DESCRIPTION PINNING page NPN planar epitaxial transistor 4 PIN DESCRIPTION mounted in a plastic SOT223 1 emitter envelope, intended for wideband 2 base amplifier a... See More ⇒

 ..2. Size:283K  philips

 bfg35.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification 1999 Aug 24 Supersedes data of 1995 Sep 12 NXP Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DESCRIPTION PINNING lfpage 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1 emitter envelope, intended for wideband 2 base amplifi... See More ⇒

Detailed specifications: BFG19S, BFG23, BFG235, BFG25AX, BFG32, BFG33, BFG33X, BFG34, TIP32C, BFG51, BFG54, BFG65, BFG65T, BFG67, BFG67X, BFG90A, BFG91A

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