BFG35 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO251
BFG35 Transistor Equivalent Substitute - Cross-Reference Search
BFG35 Datasheet (PDF)
bfg35 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGpageNPN planar epitaxial transistor 4PIN DESCRIPTIONmounted in a plastic SOT2231 emitterenvelope, intended for wideband2 baseamplifier a
bfg35.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12NXP Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGlfpage4NPN planar epitaxial transistor PIN DESCRIPTIONmounted in a plastic SOT223 1 emitterenvelope, intended for wideband 2 baseamplifi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
