All Transistors. BFG35 Datasheet

 

BFG35 Datasheet and Replacement


   Type Designator: BFG35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251
 

 BFG35 Substitution

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BFG35 Datasheet (PDF)

 ..1. Size:97K  philips
 bfg35 3.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORSDATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGpageNPN planar epitaxial transistor 4PIN DESCRIPTIONmounted in a plastic SOT2231 emitterenvelope, intended for wideband2 baseamplifier a

 ..2. Size:283K  philips
 bfg35.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORS DATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12NXP Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGlfpage4NPN planar epitaxial transistor PIN DESCRIPTIONmounted in a plastic SOT223 1 emitterenvelope, intended for wideband 2 baseamplifi

Datasheet: BFG19S , BFG23 , BFG235 , BFG25AX , BFG32 , BFG33 , BFG33X , BFG34 , 2SC1740 , BFG51 , BFG54 , BFG65 , BFG65T , BFG67 , BFG67X , BFG90A , BFG91A .

History: MJE13009F | 2SC2710R | AF427 | CH3232

Keywords - BFG35 transistor datasheet

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