All Transistors. BFG35 Datasheet

 

BFG35 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFG35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251

 BFG35 Transistor Equivalent Substitute - Cross-Reference Search

   

BFG35 Datasheet (PDF)

 ..1. Size:97K  philips
bfg35 3.pdf

BFG35
BFG35

DISCRETE SEMICONDUCTORSDATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGpageNPN planar epitaxial transistor 4PIN DESCRIPTIONmounted in a plastic SOT2231 emitterenvelope, intended for wideband2 baseamplifier a

 ..2. Size:283K  philips
bfg35.pdf

BFG35
BFG35

DISCRETE SEMICONDUCTORS DATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12NXP Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGlfpage4NPN planar epitaxial transistor PIN DESCRIPTIONmounted in a plastic SOT223 1 emitterenvelope, intended for wideband 2 baseamplifi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BF847 | 2N260

 

 
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