All Transistors. BFG35 Datasheet

 

BFG35 Datasheet and Replacement


   Type Designator: BFG35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO251
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BFG35 Datasheet (PDF)

 ..1. Size:97K  philips
 bfg35 3.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORSDATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGpageNPN planar epitaxial transistor 4PIN DESCRIPTIONmounted in a plastic SOT2231 emitterenvelope, intended for wideband2 baseamplifier a

 ..2. Size:283K  philips
 bfg35.pdf pdf_icon

BFG35

DISCRETE SEMICONDUCTORS DATA SHEETBFG35NPN 4 GHz wideband transistorProduct specification 1999 Aug 24Supersedes data of 1995 Sep 12NXP Semiconductors Product specificationNPN 4 GHz wideband transistor BFG35DESCRIPTION PINNINGlfpage4NPN planar epitaxial transistor PIN DESCRIPTIONmounted in a plastic SOT223 1 emitterenvelope, intended for wideband 2 baseamplifi

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KT201BM | 2SB765K | 2SC3599F | BF391P1 | CG125D | MPQ2907 | D34DJ3

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