BFJ21 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFJ21
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 1850 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: -
Package: TO72
BFJ21 Transistor Equivalent Substitute - Cross-Reference Search
BFJ21 Datasheet (PDF)
pmbfj210 pmbfj211 pmbfj212 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ210; PMBFJ211;PMBFJ212N-channel field-effect transistorsProduct specification 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212FEATURES PINNING - SOT23 High speed switchingPIN SYMBOL DESCRIPTION Interchangeability of dr
Datasheet: BFG93A , BFG93AX , BFG94 , BFG96 , BFG97 , BFJ17 , BFJ18 , BFJ19 , TIP3055 , BFJ22 , BFJ45 , BFJ46 , BFJ47 , BFJ48 , BFJ49 , BFJ50 , BFJ51 .