BFJ21 Specs and Replacement

Type Designator: BFJ21

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.175 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 1850 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 22

Noise Figure, dB: -

Package: TO72

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BFJ21 datasheet

 0.1. Size:100K  philips

 pmbfj210 pmbfj211 pmbfj212 1.pdf pdf_icon

BFJ21

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of dr... See More ⇒

Detailed specifications: BFG93A, BFG93AX, BFG94, BFG96, BFG97, BFJ17, BFJ18, BFJ19, C1815, BFJ22, BFJ45, BFJ46, BFJ47, BFJ48, BFJ49, BFJ50, BFJ51

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