2N3026 Datasheet. Specs and Replacement

Type Designator: 2N3026  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3

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2N3026 datasheet

 9.1. Size:60K  central

 2n3019 2n3020.pdf pdf_icon

2N3026

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.2. Size:75K  cdil

 2n3019 2n3020.pdf pdf_icon

2N3026

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 80 V Collector Base Voltage VCBO 140 V Emitter Base Voltage VEBO 7.0 V Collector Current Continuous IC 1.0 A Power Diss... See More ⇒

 9.3. Size:301K  microsemi

 2n3027-29 2n3030-32.pdf pdf_icon

2N3026

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Detailed specifications: 2N302, 2N3020, 2N3020S, 2N3021, 2N3022, 2N3023, 2N3024, 2N3025, 2SA1837, 2N303, 2N3033, 2N3034, 2N3035, 2N3036, 2N3037, 2N3038, 2N3039

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