BFQ17P Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ17P
SMD Transistor Code: FD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT89
BFQ17P Transistor Equivalent Substitute - Cross-Reference Search
BFQ17P Datasheet (PDF)
9.1. Size:31K philips
bfq17 cnv 2.pdf
bfq17 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFQ17DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FAthick and thin-film circuits. Thep
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
