All Transistors. BFQ17P Datasheet

 

BFQ17P Datasheet and Replacement


   Type Designator: BFQ17P
   SMD Transistor Code: FD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT89
 

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BFQ17P Datasheet (PDF)

 9.1. Size:31K  philips
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BFQ17P

DISCRETE SEMICONDUCTORSDATA SHEETBFQ17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFQ17DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FAthick and thin-film circuits. Thep

Datasheet: BFQ134 , BFQ135 , BFQ136 , BFQ149 , BFQ161 , BFQ162 , BFQ163 , BFQ17 , TIP3055 , BFQ18 , BFQ181 , BFQ182 , BFQ18A , BFQ19 , BFQ193 , BFQ194 , BFQ196 .

History: RN1110F | SMBT3904 | PBSS5520X

Keywords - BFQ17P transistor datasheet

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