BFQ17P Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ17P
SMD Transistor Code: FD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT89
BFQ17P Transistor Equivalent Substitute - Cross-Reference Search
BFQ17P Datasheet (PDF)
9.1. Size:31K philips
bfq17 cnv 2.pdf
bfq17 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFQ17DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FAthick and thin-film circuits. Thep
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
