BFQ18 Specs and Replacement
Type Designator: BFQ18
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT89
BFQ18 Substitution
- BJT ⓘ Cross-Reference Search
BFQ18 datasheet
BFQ18A NPN 4 GHz wideband transistor Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ18A DESCRIPTION PINNING NPN transistor in a plastic SOT89 PIN DESCRIPTION envelope intended for application in Code FF thick and thin-film circuits. It i... See More ⇒
Detailed specifications: BFQ135, BFQ136, BFQ149, BFQ161, BFQ162, BFQ163, BFQ17, BFQ17P, 13007, BFQ181, BFQ182, BFQ18A, BFQ19, BFQ193, BFQ194, BFQ196, BFQ19P
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