All Transistors. BFQ18 Datasheet

 

BFQ18 Datasheet and Replacement


   Type Designator: BFQ18
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1700 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT89
 

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BFQ18 Datasheet (PDF)

 0.1. Size:227K  philips
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BFQ18

BFQ18ANPN 4 GHz wideband transistorRev. 03 28 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.

 0.2. Size:33K  philips
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BFQ18

DISCRETE SEMICONDUCTORSDATA SHEETBFQ18ANPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ18ADESCRIPTION PINNINGNPN transistor in a plastic SOT89PIN DESCRIPTIONenvelope intended for application inCode: FFthick and thin-film circuits. It i

Datasheet: BFQ135 , BFQ136 , BFQ149 , BFQ161 , BFQ162 , BFQ163 , BFQ17 , BFQ17P , 2N3906 , BFQ181 , BFQ182 , BFQ18A , BFQ19 , BFQ193 , BFQ194 , BFQ196 , BFQ19P .

History: DDTA144GE

Keywords - BFQ18 transistor datasheet

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