BFQ18 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ18
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT89
BFQ18 Transistor Equivalent Substitute - Cross-Reference Search
BFQ18 Datasheet (PDF)
bfq18a n.pdf
BFQ18ANPN 4 GHz wideband transistorRev. 03 28 September 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.
bfq18a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ18ANPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ18ADESCRIPTION PINNINGNPN transistor in a plastic SOT89PIN DESCRIPTIONenvelope intended for application inCode: FFthick and thin-film circuits. It i
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
