BFQ27 Datasheet. Specs and Replacement

Type Designator: BFQ27  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: MM17

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BFQ27 datasheet

 0.1. Size:102K  philips

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BFQ27

DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFQ270 FEATURES PINNING High power gain PIN DESCRIPTION Emitter-ballasting resistors for 1 collector page good thermal stability 4 2 emitter G... See More ⇒

Detailed specifications: BFQ255A, BFQ262, BFQ262A, BFQ263, BFQ263A, BFQ265, BFQ265A, BFQ268, TIP42, BFQ270, BFQ28, BFQ29, BFQ29P, BFQ29R, BFQ30, BFQ31, BFQ31A

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