BFQ59 Specs and Replacement

Type Designator: BFQ59

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.45 W

Maximum Collector-Base Voltage |Vcb|: 27 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.035 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4000 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: MM17

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BFQ59 datasheet

 0.1. Size:213K  inchange semiconductor

 bfq591.pdf pdf_icon

BFQ59

isc Silicon NPN RF Transistor BFQ591 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒

Detailed specifications: BFQ51C, BFQ52, BFQ53, BFQ54, BFQ54T, BFQ56, BFQ57, BFQ58, BD333, BFQ60, BFQ61, BFQ62, BFQ63, BFQ64, BFQ645, BFQ64P, BFQ65

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