BFQ59 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ59
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 27 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4000 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: MM17
BFQ59 Transistor Equivalent Substitute - Cross-Reference Search
BFQ59 Datasheet (PDF)
bfq591.pdf
isc Silicon NPN RF Transistor BFQ591DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in MATV or CATV amplifiers and RFcommunications subscribers equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .