BFQ68 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ68
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 4.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4000 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO128
BFQ68 Transistor Equivalent Substitute - Cross-Reference Search
BFQ68 Datasheet (PDF)
bfq68 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ68NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ68DESCRIPTION PINNINGNPN transistor mounted in a four-leadPIN DESCRIPTIONdual-emitter SOT122A envelope with1 collectora ceramic cap. All leads are is
Datasheet: BFQ63 , BFQ64 , BFQ645 , BFQ64P , BFQ65 , BFQ66 , BFQ67 , BFQ67W , 13007 , BFQ69 , BFQ70 , BFQ71 , BFQ72 , BFQ73 , BFQ73S , BFQ74 , BFQ75 .