BFQ68 Specs and Replacement
Type Designator: BFQ68
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 4.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4000 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO128
BFQ68 Substitution
- BJT ⓘ Cross-Reference Search
BFQ68 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 DESCRIPTION PINNING NPN transistor mounted in a four-lead PIN DESCRIPTION dual-emitter SOT122A envelope with 1 collector a ceramic cap. All leads are is... See More ⇒
Detailed specifications: BFQ63, BFQ64, BFQ645, BFQ64P, BFQ65, BFQ66, BFQ67, BFQ67W, 2N5401, BFQ69, BFQ70, BFQ71, BFQ72, BFQ73, BFQ73S, BFQ74, BFQ75
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