All Transistors. BFQ79 Datasheet

 

BFQ79 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFQ79
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.29 W
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.075 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO131

 BFQ79 Transistor Equivalent Substitute - Cross-Reference Search

   

BFQ79 Datasheet (PDF)

 0.1. Size:479K  infineon
 bfq790.pdf

BFQ79 BFQ79

BFQ790High Linearity RF Medium Power AmplifierProduct descriptionThe BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and costeffective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in highlinearity applications.Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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