BFQ79 Specs and Replacement

Type Designator: BFQ79

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.29 W

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.075 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4200 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO131

 BFQ79 Substitution

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BFQ79 datasheet

 0.1. Size:479K  infineon

 bfq790.pdf pdf_icon

BFQ79

BFQ790 High Linearity RF Medium Power Amplifier Product description The BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in high linearity applications. Features High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 ... See More ⇒

Detailed specifications: BFQ72, BFQ73, BFQ73S, BFQ74, BFQ75, BFQ76, BFQ77, BFQ78, TIP3055, BFQ80, BFQ81, BFQ82, BFQ85, BFQ86, BFQ88, BFQ88A, BFQ88B

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