All Transistors. BFQ81 Datasheet

 

BFQ81 Datasheet and Replacement


   Type Designator: BFQ81
   SMD Transistor Code: RA_RAs
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.28 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5800 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO236
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BFQ81 Datasheet (PDF)

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BFQ81

BFQ 81NPN Silicon RF Transistor For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23Maximum Rating

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: A933 | BC550 | SRA2207SF | TIP34C | FCX1147A

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