BFQ81 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ81
SMD Transistor Code: RA_RAs
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.28 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5800 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO236
BFQ81 Transistor Equivalent Substitute - Cross-Reference Search
BFQ81 Datasheet (PDF)
bfq81.pdf
BFQ 81NPN Silicon RF Transistor For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23Maximum Rating
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .