BFQ81 Specs and Replacement

Type Designator: BFQ81

SMD Transistor Code: RA_RAs

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.28 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5800 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO236

 BFQ81 Substitution

- BJT ⓘ Cross-Reference Search

 

BFQ81 datasheet

 ..1. Size:56K  siemens

 bfq81.pdf pdf_icon

BFQ81

BFQ 81 NPN Silicon RF Transistor For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23 Maximum Rating... See More ⇒

Detailed specifications: BFQ73S, BFQ74, BFQ75, BFQ76, BFQ77, BFQ78, BFQ79, BFQ80, BC557, BFQ82, BFQ85, BFQ86, BFQ88, BFQ88A, BFQ88B, BFQ89, BFQ98

Keywords - BFQ81 pdf specs

 BFQ81 cross reference

 BFQ81 equivalent finder

 BFQ81 pdf lookup

 BFQ81 substitution

 BFQ81 replacement