All Transistors. BFQ81 Datasheet

 

BFQ81 Datasheet and Replacement


   Type Designator: BFQ81
   SMD Transistor Code: RA_RAs
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.28 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5800 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO236
 

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BFQ81 Datasheet (PDF)

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BFQ81

BFQ 81NPN Silicon RF Transistor For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23Maximum Rating

Datasheet: BFQ73S , BFQ74 , BFQ75 , BFQ76 , BFQ77 , BFQ78 , BFQ79 , BFQ80 , TIP122 , BFQ82 , BFQ85 , BFQ86 , BFQ88 , BFQ88A , BFQ88B , BFQ89 , BFQ98 .

History: BUH315DXI | 2SD669AM-A | TSC114TNND03

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