BFR36A Specs and Replacement
Type Designator: BFR36A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO39
BFR36A Substitution
- BJT ⓘ Cross-Reference Search
BFR36A datasheet
BFR360L3 Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device,... See More ⇒
Detailed specifications: BFR280W, BFR34, BFR34A, BFR35, BFR35A, BFR35AP, BFR35AR, BFR36, 2SC2383, BFR37, BFR38, BFR39, BFR39TO5, BFR40, BFR40TO5, BFR41, BFR41TO5
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