BFR36A Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR36A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO39
BFR36A Transistor Equivalent Substitute - Cross-Reference Search
BFR36A Datasheet (PDF)
bfr360l3.pdf
BFR360L3Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device,
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS